Apparatus, systems, and methods of using atomic hydrogen radicals with selective epitaxial deposition

ABSTRACT

Aspects of the present disclosure relate to apparatus, systems, and methods of using atomic hydrogen radicals with epitaxial deposition. In one aspect, nodular defects (e.g., nodules) are removed from epitaxial layers of substrate. In one implementation, a method of processing substrates includes selectively growing an epitaxial layer on one or more crystalline surfaces of a substrate. The epitaxial layer includes silicon. The method also includes etching the substrate to remove a plurality of nodules from one or more non-crystalline surfaces of the substrate. The etching includes exposing the substrate to atomic hydrogen radicals. The method also includes thermally annealing the epitaxial layer to an anneal temperature that is 600 degrees Celsius or higher.

BACKGROUND Field

Aspects of the present disclosure relate to apparatus, systems, andmethods of using atomic hydrogen radicals with epitaxial deposition. Inone aspect, nodular defects (e.g., nodules) are removed followingselective growth of epitaxial layers on a substrate.

Description of the Related Art

Epitaxial deposition is a deposition process that may be used to growlayers on crystalline surfaces of substrates. However, in selectiveepitaxial growth of epitaxial layers, some residual or non-selectivegrowth can occur in undesired locations, causing defects. Additionally,removing non-selective growth in undesired locations can damageepitaxial layers or otherwise interfere with the epitaxial layers.

Therefore, there is a need for improved methods, apparatus, and systemsthat remove residual or non-selective growth in undesired locations at areduced or eliminated probability of damage to or interference withepitaxial layers.

SUMMARY

Aspects of the present disclosure relate to apparatus, systems, andmethods of using atomic hydrogen radicals with epitaxial deposition. Inone aspect, following growth of epitaxial layers on a substrate, nodulardefects (e.g., nodules) which are residual or non-selective growth oncertain areas of the substrate are removed.

In one implementation, a method of processing substrates includesselectively growing an epitaxial layer on one or more crystallinesurfaces of a substrate. The epitaxial layer includes silicon. Themethod also includes etching the substrate to remove a plurality ofnodules from one or more non-crystalline surfaces of the substrate. Theetching includes exposing the substrate to atomic hydrogen radicals. Themethod also includes thermally annealing the epitaxial layer to ananneal temperature that is 600 degrees Celsius or higher.

In one implementation, a system for processing substrates includes oneor more processing chambers, and a controller. The controller includesinstructions that, when executed, cause the one or more processingchambers to selectively grow an epitaxial layer on one or morecrystalline surfaces of a substrate. The epitaxial layer includessilicon. The instructions, when executed, also cause the one or moreprocessing chambers to etch the substrate to remove a plurality ofnodules from one or more dielectric surfaces of the substrate. Theetching includes exposing the substrate to atomic hydrogen radicals. Theinstructions, when executed, also cause the one or more processingchambers to thermally anneal the epitaxial layer to an annealtemperature that is 600 degrees Celsius or higher.

In one implementation, a system for processing substrates includes aprocessing chamber having an interior volume, a plasma source coupled tothe processing chamber, and a controller. The controller includesinstructions that, when executed, cause the processing chamber toselectively grow an epitaxial layer on one or more crystalline surfacesof a substrate. The epitaxial layer includes silicon. The instructions,when executed, also cause the processing chamber to etch the substrateto remove a plurality of nodules from one or more dielectric surfaces ofthe substrate. The etching includes generating atomic hydrogen radicalsusing the plasma source, and exposing the substrate to the atomichydrogen radicals within the interior volume. The instructions, whenexecuted, also cause the processing chamber to thermally anneal theepitaxial layer.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above-recited features of the disclosurecan be understood in detail, a more particular description of thedisclosure, briefly summarized above, may be had by reference toimplementations, some of which are illustrated in the appended drawings.It is to be noted, however, that the appended drawings illustrate onlycommon implementations of this disclosure and are therefore not to beconsidered limiting of its scope, for the disclosure may admit to otherequally effective implementations.

FIG. 1 is a schematic view of a method of processing substrates,according to one implementation.

FIG. 2 is a schematic view of a system for processing substrates,according to one implementation.

FIG. 3 is a schematic cross-sectional view of a processing chamber,according to one implementation.

FIG. 4 is a schematic cross-sectional view of a processing chamber,according to one implementation.

FIG. 5 is a schematic cross-sectional view of a processing chamber,according to one implementation.

FIG. 6 is a schematic cross-sectional view of a processing chamber,according to one implementation.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements disclosed in oneimplementation may be beneficially utilized on other implementationswithout specific recitation.

DETAILED DESCRIPTION

Aspects of the present disclosure relate to apparatus, systems, andmethods of using atomic hydrogen radicals with epitaxial deposition. Inone aspect, nodular defects (e.g., nodules) are removed followingselective growth of epitaxial layers on a substrate.

FIG. 1 is a schematic view of a method 100 of processing substrates,according to one implementation. Operation 101 of the method includespre-cleaning the substrate prior to selectively growing an epitaxiallayer on a substrate. The pre-cleaning removes one or more contaminantsfrom one or more crystalline surfaces of the substrate. The contaminantsinclude native oxide or other contaminants.

Operation 102 of the method 100 includes selectively growing anepitaxial layer on the one or more crystalline surfaces of thesubstrate. The epitaxial layer includes silicon, doped silicon,germanium, doped germanium, silicon germanium, doped silicon germanium,germanium tin, silicon germanium tin, gallium arsenide, indium arsenide,indium phosphide, gallium nitride, and/or aluminum gallium nitride. Theone or more crystalline surfaces are exposed surfaces that at leastpartially define an epitaxial window. The substrate also includes one ormore non-crystalline surfaces, such as one or more dielectric surfaces,that are outside of the epitaxial window. In one embodiment, which canbe combined with other embodiments, the epitaxial layer is selectivelygrown at a growth temperature within a range of 200 degrees Celsius to800 degrees Celsius.

The selectively growing the epitaxial layer includes exposing thesubstrate to one or more silicon-containing gases, one or more carriergases such as H2, N2, Ar, and/or He, one or more germanium-containinggases, hydrogen chloride (HCl), chlorine gas (Cl2), and/or hydrogenbromide (HBr). The one or more silicon-containing gases include one ormore silanes, such as silane (SiH4), disilane (Si₂H₆,), dichlorosilane(SiH₂Cl₂), hexachlorodisilane (Si₂Cl₆), dibromosilane (SiH₂Br₂), and/orhigher order silane derivatives thereof. The one or moregermanium-containing gases include one or more of germane (GeH₄),digermane (Ge₂H₆), germanium tetrachloride (GeCl₄), dichlorogermane(GeH₂Cl₂), and/or derivatives thereof. The selectively growing theepitaxial layer also includes exposing the substrate to one or moredopant gases. In one embodiment, which can be combined with otherembodiments, the one or more dopant gases include one or more ofdiborane (B₂H₆), boron trichloride (BCl₃), phosphine, phosphoroustrichloride (PCl₃), tertiarybutylphosphine (TBP), silylphosphines,arsine (AsH₃), tertiarybutylarsine (TBA), triethylantimony (TESb), tinchloride (SnCl₄), and trimethylgallium (TMGa).

During the selectively growing, nodular defects (e.g., nodules) can formon the one or more non-crystalline surfaces that are outside of theepitaxial window. Operation 103 includes etching the substrate to removea plurality of nodules from the substrate. The etching includes exposingthe substrate to atomic hydrogen radicals. In one embodiment, which canbe combined with other embodiments, the substrate is exposed to theatomic hydrogen radicals at an etch temperature that is 600 degreesCelsius or less. The atomic hydrogen radicals include hydrogen atomsthat include an unpaired valence electron. The atomic hydrogen radicalsare a part of a hydrogen plasma to which the substrate is exposed. Inone embodiment, which can be combined with other embodiments, both theone or more crystalline surfaces within the epitaxial window and the oneor more non-crystalline surfaces outside of the epitaxial window areexposed to the atomic hydrogen radicals to remove the plurality ofnodules from the non-crystalline surfaces. In one embodiment, which canbe combined with other embodiments, the substrate is exposed to theatomic hydrogen radicals at an etch pressure within a range 5 mTorr to500 mTorr, and a flow rate within a range of 100 standard cubiccentimeters per minute (SCCM) to 300 SCCM. In one embodiment, which canbe combined with other embodiments, the exposing the substrate to theatomic hydrogen radicals includes exposing one or more dielectricsurfaces of the substrate to the atomic hydrogen radicals to remove theplurality of nodules from the one or more dielectric surfaces. In oneembodiment, which can be combined with other embodiments, the atomichydrogen radicals are generated by filtering (such as by using an ionfilter) or otherwise removing ions from plasma species having hydrogen.In one embodiment, which can be combined with other embodiments, theatomic hydrogen radicals are generated in-situ in a process chamber. Inone embodiment, which can be combined with other embodiments, the atomichydrogen radicals are generated in a remote plasma source coupled to aprocess chamber.

Operation 105 includes thermally annealing the epitaxial layer that isformed at operation 102 to an anneal temperature. The anneal temperatureis 600 degrees Celsius or higher. In one embodiment, which can becombined with other embodiments, the thermally annealing the epitaxiallayer to the anneal temperature includes exposing the epitaxial layer toone or more of hydrogen (H2) and/or one or more inert gases whileheating the epitaxial layer to the anneal temperature. The epitaxiallayer is heated to the anneal temperature using one or more heat lampsand/or one or more resistive heaters. In one embodiment, which can becombined with other embodiments, the epitaxial layer is exposed to theone or more of hydrogen (H2) and/or the one or more inert gases at aflow rate that is within a range of 1.0 standard liters per minute (SLM)to 30.0 SLM during the thermal annealing. In one embodiment, which canbe combined with other embodiments, the one or more inert gases includeone or more of nitrogen (N2), helium (He) and/or argon (Ar). In oneembodiment, which can be combined with other embodiments, the thermalannealing of operation 105 is conducted at an anneal pressure that iswithin a range of 5 Torr to 300 Torr.

The thermal annealing facilitates removing hydrogen from the epitaxiallayer (such as hydrogen that may have been implanted during the exposingoperation) and facilitates device integration and performance for adevice having the epitaxial layer. The thermal annealing alsofacilitates diffusion of atoms at the near surface region of thecrystalline structures to facilitate smoothing out any atomic scaleroughness caused by the etching.

In one embodiment, which can be combined with other embodiments, themethod 100 includes operation 107. Operation 107 includes repeatingoperations 101, 102, 103, 105 one or more additional times on the samesubstrate. In one example, which can be combined with other examples,operations 101, 102, 103, and 105 are repeated two additional times onthe substrate to form a second epitaxial layer and a third epitaxiallayer on the substrate that are each etched and thermally annealed. Thepresent disclosure contemplates that the repeating of operation 107 canomit one or more of the operations 101, 102, 103, and/or 105. In oneexample, which can be combined with other examples, operation 107 omitsoperation 101 and includes repeating operations 102, 103, and 105 on thesame substrate. In such an example, the same substrate remains undervacuum as the method 100 moves from operation 102, to operation 103, tooperation 105, and back to operation 102 pursuant to operation 107.

In one embodiment, which can be combined with other embodiments, themethod 100 includes operation 109. Operation 109 includes repeatingoperations 101, 102, 103, 105 on one or more additional substrates. Inone example, which can be combined with other examples, operations 101,102, 103, and 105 are repeated on a second substrate and a thirdsubstrate to form one or more epitaxial layers on the second substrateand the third substrate that are each etched and thermally annealed.

In one embodiment, which can be combined with other embodiments theoperations 101, 102, 103, 105, 107, and/or 109 are conducted in a singleprocessing chamber. In one example, which can be combined with otherexamples, some but not all of the operations 101, 102, 103, 105, 107,and/or 109 are conducted in the single processing chamber.

In one embodiment, which can be combined with other embodiments, anon-transitory computer-readable medium includes instructions that, whenexecuted, cause a system to conduct the operations 101, 102, 103, 105,107, and/or 109 of the method. In one example, which can be combinedwith other examples, the non-transitory computer-readable mediumincludes a controller that includes the instructions.

FIG. 2 is a schematic view of a system 200 for processing substrates,according to one implementation. The system 200 can be used to conductthe operations of the method 100 shown in FIG. 1. The system 200includes a cluster tool 201. The cluster tool 201 of the system 200includes one or more processing chambers 202, 203, 216, 218 (a pluralityof processing chambers 202, 203, 216, 218 are shown) coupled to one ormore transfer chambers 204 and 210.

A first transfer chamber 204 is coupled to one or more epitaxy chambers202. The first transfer chamber 204 has a centrally disposed transferrobot 215 for transferring substrates between the epitaxy chambers 202,the etch chambers 203, and a plurality of pass-through stations 206. Thefirst transfer chamber 204 is coupled via the pass-through stations 206to a second transfer chamber 210, which is coupled to a cleaning chamber216 for cleaning the substrates and to an anneal chamber 218. The secondtransfer chamber 210 has a centrally disposed transfer robot 214 fortransferring substrates between a set of load lock chambers 212 and thecleaning chamber 216. A factory interface 220 is connected to the secondtransfer chamber 210 by the load lock chambers 212. The factoryinterface 220 is coupled to one or more pods 230 on the opposite side ofthe load lock chambers 212. The pods 230 typically are front openingunified pods (FOUP) that are accessible from the clean room in which thecluster tool 201 is disposed.

During operation, substrates are first transferred to the cleaningchamber 216 in which the substrates are pre-cleaned, as described foroperation 101. The substrates are then transferred to one or moreepitaxy chambers 202 to selectively grow an epitaxial layer on thesubstrates, as described for operation 102 of the method 100. Thesubstrates are then transferred to one or more etch chambers 203, inwhich the substrates are exposed to atomic hydrogen radicals to etch thesubstrates and remove nodules from the substrates, as described foroperation 103. The substrates are then transferred to the anneal chamber218, in which the epitaxial layers formed on the substrates are annealedto an anneal temperature, as described for operation 105.

The first transfer chamber 204 and second transfer chamber 210 are heldunder vacuum during operations such that the transfer robots 214 and 215transfers substrates under vacuum between all the processing chambers,the load lock chambers 212, and the pass through stations 206.Transferring the substrates under vacuum facilitates decreasing thechance of contamination, improving the quality of the depositedepitaxial films, and rendering optional the pre-cleaning operation 101before repetition of the epitaxial growth operation 102 after operations103 and 105 are conducted. The present disclosure contemplates that oneor more of the chambers shown in the system 200 may not be clusteredinto the cluster tool 201. For example, either or both of the etchchambers 203 and/or the anneal chamber 218 in the system 200 can beseparate (not clustered) from the cluster tool 201 having the cleaningchamber 216 and the epitaxy chambers 202. Use of the cleaning chamber216 is present when the substrate is brought back (from the separateetch chamber and the separate anneal chambers) for repeat of the epitaxyoperation 102, unless the cluster tool 201 is capable of receiving apurged FOUP or a portable vacuum station to minimize contamination whenthe substrate is transferred out and into the cluster tool 201.

In the implementation shown in FIG. 2, the cleaning chamber 216, theepitaxy chambers 202, the etch chambers 203, and the anneal chamber 218are distinct from each other. In one embodiment, which can be combinedwith other embodiments, the thermal annealing described for operation105 is conducted in the epitaxy chambers 202. In such an embodiment, theanneal chamber 218 is not distinct from the epitaxy chambers 202, sothat the anneal chamber 218 can be omitted. In one embodiment, which canbe combined with other embodiments, each processing chamber of theprocessing chambers 202 and 203, is a single processing chamber in whicheach of the operations 101, 102, 103, and 105, the repeating inoperation 107, and the repeating in operation 109 are conducted. In suchan embodiment, each of the processing chambers 202 (two are shown inFIG. 2) and each of the processing chambers 203 (two are shown in FIG.2) is a processing chamber in which each of the operations 101, 102,103, and 105, the repeating in operation 107, and the repeating inoperation 109 are conducted. In such an embodiment, the processingchambers 202 are two single processing chambers in each of which theoperations 101, 102, 103, and 105, the repeating in operation 107, andthe repeating in operation 109 are conducted. In such an embodiment, theprocessing chambers 203 are two single processing chambers in each ofwhich the operations 101, 102, 103, and 105, the repeating in operation107, and the repeating in operation 109 are conducted. In oneembodiment, which can be combined with other embodiments, each of thecleaning chamber 216 (one is shown in FIG. 2) and the anneal chamber 218is a single processing chamber in which each of the operations 101, 102,103, and 105, the repeating in operation 107, and the repeating inoperation 109 are conducted.

The system 200 includes a non-transitory computer-readable medium 250that is configured to control operations of the cluster tool 201. Thenon-transitory computer-readable medium 250 is coupled to the pods 230,the factory interface 220, the load lock chambers 212, the secondtransfer chamber 210, the transfer robot 214, the cleaning chamber 216,the epitaxy chambers 202, the first transfer chamber 204, the transferrobot 215, the etch chambers 203, and the anneal chamber 218 to controlthe operations thereof. The non-transitory computer-readable medium 250includes instructions that, when executed, cause the cleaning chamber216, the epitaxy chambers 202, the etch chambers 203, and the annealchamber 218 to conduct the operations of the method 100. In oneembodiment, which can be combined with other embodiments, thenon-transitory computer-readable medium 250 is a controller thatincludes the instructions.

FIG. 3 is a schematic cross-sectional view of a processing chamber 300,according to one implementation. The processing chamber 300 is a singleprocessing chamber that functions as an epitaxy chamber, an etchchamber, and an anneal chamber. The processing chamber 300 can alsofunction as a pre-cleaning chamber. The processing chamber 300 is anepitaxial deposition chamber or a thermal chemical vapor deposition(CVD) chamber equipped with a plasma source of atomic hydrogen. In oneembodiment, which can be combined with other embodiments, the processingchamber 300 is a plasma hydrogen chamber.

The processing chamber 300 is part of a system 301 that processes one ormore substrates, including the epitaxial deposition of a material on anupper surface of a substrate 302, annealing of the substrate 302,etching of the substrate 302, or combinations thereof. The processingchamber 300 includes a chamber body 303, and an array of radiant heatinglamps 304 for heating, among other components, a substrate support 306disposed within the processing chamber 300, and the substrates 302positioned on the substrate support 306. The array of radiant heatinglamps 304 are disposed in a housing 348 below the substrate support 306.The radiant heating lamps 304 may provide a total lamp power of betweenabout 10 KW and about 60 KW. The radiant heating lamps 304 may heat thesubstrate 302 to a temperature that is 200 degrees Celsius or higher.The substrate support 306 may be a disk-like substrate support as shown,or may include a ring-like substrate support, which supports thesubstrate 302 from the edge of the substrate 302, which exposes abackside of the substrate 302 to heat from the radiant heating lamps304. The substrate support 306 may be formed from silicon carbide orgraphite coated with silicon carbide to absorb radiant energy from thelamps 304 and conduct the radiant energy to the substrate 302, thusheating the substrate 302.

The chamber body 303 includes a stainless steel base ring 312 disposedabove a floor member 310. The base ring 312 includes one or moresidewalls protected by quartz liners 363. The floor member 310 isconical shaped and transparent. The processing chamber 300 also includesa plasma source lid assembly 370 disposed above the base ring 312. Theplasma source lid assembly 370 includes a stainless steel top plate 382,a resonator liner 359, and a quartz gas distribution plate 371. Theplasma source lid assembly 370 also includes a resonator assembly 376.The resonator assembly 376 includes a plurality of microwave resonators374, and a plurality of power sources 399 disposed in resonator housings377. The resonator liner 359 may be disposed at least partially betweenthe stainless steel top plate 382 and the gas distribution plate 371.

The plasma source lid assembly 370, the base ring 312 of the chamberbody 303, and the floor member 310 define an interior volume 311 for theprocessing chamber 300. The substrate support 306 is located withininterior volume 311 above the floor member 310 of the processing chamber300. The substrate 302 can be transferred into the processing chamber300 and positioned onto the substrate support 306 through a loading portformed in the base ring 312. Gas injection plenums 314 and 379 and a gasoutlet 316 are formed in the base ring 312. The array of radiant heatinglamps 304 are disposed outside of the interior volume 311.

The substrate support 306 is rotatable, and includes a shaft or stem 318that is coupled to a motion assembly 320. The motion assembly 320includes one or more actuators and/or adjustment devices that providemovement and/or adjustment of the stem 318 and/or the substrate support306 within the interior volume 311. For example, the motion assembly 320may include a rotary actuator 322 that rotates the substrate support 306about a longitudinal axis A of the processing chamber 300. Thelongitudinal axis A may include a center of an X-Y plane of theprocessing chamber 300. The motion assembly 320 may include a verticalactuator 324 to lift and lower the substrate support 306 in the Zdirection. The motion assembly 320 may include a tilt adjustment device326 that is used to adjust a planar orientation of the substrate support306 in the interior volume 311. The motion assembly 320 may also includea lateral adjustment device 328 that is utilized to adjust thepositioning of the stem 318 and/or the substrate support 306 side toside within the interior volume 311. In embodiments including a lateraladjustment device 328 and a tilt adjustment device 326, the lateraladjustment device 328 is utilized to adjust positioning of the stem 318and/or the substrate support 306 in the X and/or Y direction while thetilt adjustment device 326 adjusts an angular orientation (α) of thestem 318 and/or the substrate support 306. In one embodiment, which canbe combined with other embodiments, the motion assembly 320 includes apivot mechanism 330. As the floor member 310 is attached to theprocessing chamber 300 using the base ring 312, the pivot mechanism 330is utilized to allow the motion assembly 320 to move the stem 318 and/orthe substrate support 306 at least in the angular orientation (α) toreduce stresses on the floor member 310.

The substrate support 306 is shown in an elevated processing positionbut may be lifted or lowered vertically by the motion assembly 320 asdescribed above. The substrate support 306 may be lowered to a transferposition (below the processing position) to allow lift pins 332 tocontact the floor member 310. The lift pins 332 extend through holes 307in the substrate support 306 as the substrate support 306 is lowered,and the lift pins 332 raise the substrate 302 from the substrate support306. A transfer robot may then enter the processing chamber 300 toengage and remove the substrate 302 therefrom though the loading port. Anew substrate 302 may be loaded onto the lift pins 332 by the transferrobot, and the substrate support 306 may then be actuated up to theprocessing position to place the substrate 302, with a device side 350of the substrate 302 facing up. The lift pins 332 include an enlargedhead allowing the lift pins 332 to be suspended in openings by thesubstrate support 306 in the processing position. In one embodiment,which can be combined with other embodiments, stand-offs 334 coupled tothe floor member 310 are utilized to provide a flat surface for the liftpins 332 to contact. The stand-offs 334 provide one or more surfacesparallel to the X-Y plane of the processing chamber 300 and may be usedto prevent binding of the lift pins 332 that may occur if the endthereof is allowed to contact the curved surface of the transmissivemember 310. The stand-offs 334 may be made of an optically transparentmaterial, such as quartz, to allow energy from the lamps 304 to passtherethrough.

The substrate support 306, while located in the processing position,divides the interior volume 311 of the processing chamber 300 into aprocess gas region 336 that is above the substrate support 306, and apurge gas region 338 below the substrate support 306. The substratesupport 306 is rotated during processing by the rotary actuator 322 tominimize the effect of thermal and deposition gas flow spatial anomalieswithin the processing chamber 300 and thus facilitates uniformprocessing of the substrate 302. The substrate support 306 may rotate atbetween about 5 RPM and about 100 RPM, for example, between about 10 RPMand about 50 RPM. The substrate support 306 is supported by the stem318, which is generally centered on the substrate support 306 andfacilitates movement of the substrate support 306 and the substrate 302in a vertical direction (Z direction) during substrate transfer, and/orprocessing of the substrate 302.

One or more lamps, such as the array of the radiant heating lamps 304,can be disposed adjacent to and beneath the floor member 310 in aspecified manner around the stem 318. The floor member 310 is formedfrom an optically transparent material such as quartz. The radiantheating lamps 304 may be independently controlled in zones in order tocontrol the temperature of various regions of the substrate 302 as thedeposition gas passes thereover, thus facilitating the epitaxialdeposition of a material onto the upper surface of the substrate 302.

The radiant heating lamps 304 may include a radiant heat source,depicted here as a lamp bulb 341, and may be configured to heat thesubstrate 302 to a temperature within a range of about 200 degreesCelsius to about 1,600 degrees Celsius. Each lamp bulb 341 can becoupled to a power distribution board, such as printed circuit board(PCB) 352, through which power is supplied to each lamp bulb 341. Astandoff may be used to couple the lamp bulb 341 to the powerdistribution board, if desired, to change the arrangement of lamps. Inone embodiment, which can be combined with other embodiments, theradiant heating lamps 304 are positioned within a lamphead 345 which maybe cooled during or after processing by, for example, a cooling fluidintroduced into channels 349 located between the radiant heating lamps304.

During a selective growing operation to selectively grow an epitaxiallayer on the substrate 302 (as described for operation 102), one or moredeposition gases (which are epitaxial deposition gases) are suppliedfrom process gas sources 351 and/or 380 and introduced into the processgas region 336 through the gas injection plenums 314 and 379 formed in asidewall of the base ring 312 to couple to the interior volume 311. Thedeposition gases include one or more of silicon, phosphorous and/orboron or the other dopants described herein, germanium, hydrogenchloride, chlorine, and/or one or more carrier gases. The one or morecarrier gases includes one or more of H₂, N₂, Ar, and/or He. The gasinjection plenums 314 and 379 are coupled to a side 390 of the interiorvolume 311 to deliver the one or more deposition gases through the side390 of the interior volume 311.

In the implementation shown in FIG. 3, the gas injection plenums 314 and379 are configured to direct the deposition gases in a generallyradially inward direction. As such, the gas injection plenum 314 may bepart of a cross-flow gas injector. The cross-flow gas injector ispositioned to direct the deposition gases across a surface of thesubstrate support 306 and/or the substrate 302. During an epitaxiallayer growth operation, the substrate support 306 is located in theprocessing position, which is adjacent to and at about the sameelevation as the gas injection plenums 314 and 379, thus allowing thedeposition gases to flow generally along flow path 373 across the uppersurface of the substrate support 306 and/or substrate 302. Thedeposition gases exit the process gas region 336 (along flow path 375)through the gas outlet 316 located on the opposite side of theprocessing chamber 300 as the gas injection plenums 314 and 379. Removalof the deposition gases through the gas outlet 316 may be facilitated bya vacuum pump 357 coupled thereto.

A pumping ring 346 may be optionally disposed around the substratesupport 306 and adjacent to a liner 363 disposed on an inner side of thebase ring 312. The pumping ring 346 is an alternate path for pumpinggases out of the interior volume 311 via an outlet path 353 and a valve355. In one embodiment, which can be combined with other embodiments, inconjunction with the use of the pumping ring 346, deposition gases maybe alternatively introduced into the process gas region 336 via aninternal plenum 372 of the gas distribution plate 371 from a gas source383 and a channel 384. Holes 389 in sidewalls 396 of the gasdistribution plate 371 allow deposition gases to exit the internalplenum 372 and enter the process gas region 336 via openings 398. Thepumping ring 346 may also serve as a pre-heat zone for the depositiongases. The pumping ring 346 may be made from CVD SiC, sintered graphitecoated with SiC, grown SiC, opaque quartz, coated quartz, or anysimilar, suitable material that is resistant to chemical breakdown byprocess and purge gases. Gases enter an inner circular plenum of thepumping ring 346 via holes all around the top and bottom surfaces of thepumping ring 346.

Purge gas supplied from a purge gas source 362 is introduced to thepurge gas region 338 through a purge gas inlet 364 formed in thesidewall of the base ring 312. The purge gas inlet 364 is disposed at anelevation below the gas injection plenum 314. If the pumping ring 346 isused, the pumping ring 346 may be disposed between the gas injectionplenum 314 and the purge gas inlet 364. In either case, the purge gasinlet 364 is configured to direct the purge gas in a generally radiallyinward direction. The purge gas inlet 364 may be configured to directthe purge gas in an upward direction. During an epitaxial layer growthoperation, the substrate support 306 is located at a position such thatthe purge gas flows generally along flow path 365 across a back side ofthe substrate support 306. The purge gas exits the purge gas region 338(along flow path 366) and is exhausted out of the processing chamber 300through the gas outlet 316 located on the opposite side of theprocessing chamber 300 as the purge gas inlet 364.

During an etching operation including exposing the substrate 302 toatomic hydrogen radicals (as described for operation 103), the processgas sources 351 and 380 are inactive such that the deposition gas is notintroduced into the processing chamber 300. During the etchingoperation, helium (He), and/or argon (Ar) gases are introduced into theplasma source lid assembly 370 from a gas source 358 and a gas channel360, and the microwave resonators 374 are active (e.g., powered). In oneembodiment, which can be combined with other embodiments, the gaschannel 360 (which is coupled to the gas source 358) extends verticallythrough the top plate 382 and a resonator liner 359 of the lid assembly370. Gases from the gas source 358 flow along outer sides of themicrowave resonators 374 (as illustrated for the gas channel 360 shownin ghost in FIG. 3). In such an embodiment, the gas source 358 is influid communication with the regions 392 and 397 of the lid assembly370. Region 392 is bounded by the top surface 394 of gas distributionplate 371 and the bottom of the resonator liner 359. Region 397 is thetop opening of the gas distribution plate 371.

The plasma includes atomic hydrogen radicals by including hydrogen H₂from the gas source 358. The plasma species produced when the microwaveresonators 374 are active, including the atomic hydrogen radicals, exitthe region 397 of the plasma source lid assembly 370 and are deliveredto the interior volume 311 through an opening 398 (a plurality ofopenings 398 are shown in FIG. 3) at a bottom surface 391 of the gasdistribution plate 371. The bottom surface 391 of the gas distributionplate 371 serves as the ceiling of the interior volume 311. In oneembodiment, which can be combined with other embodiments, to reduce orminimize residence time of hydrogen radicals in the regions 392 and 397,hydrogen is alternatively separately introduced into an internal plenum372 of the gas distribution plate 371 from a gas source 383 and achannel 384. In this case, atomic hydrogen produced close to the opening398 upon exiting plenum 372 via holes 389 in the sidewalls 396 haslittle time to recombine inside the gas distribution plate 371. One ormore non-crystalline surfaces of the substrate 302 are exposed to theatomic hydrogen radicals. The atomic hydrogen radicals react with aplurality of nodules grown on the one or more non-crystalline surfacesof the substrate 302 to remove the plurality of nodules from the one ormore non-crystalline surfaces of the substrate 302 while maintaining theepitaxial layer formed on the one or more crystalline surfaces.

During and/or following the etching, etched byproducts can be pumped outof the processing chamber 300 using the pumping ring 346. In oneembodiment, which can be combined with other embodiments, a first flowvalve 354 is closed and a second flow valve 355 is open during etchingto pump out the etched byproducts.

During a thermal anneal operation (as described for operation 105), oneor more anneal gases are introduced into the processing chamber 300 fromthe process gas source 351 through the gas injection plenum 314. Theanneal gases follow the flow paths 373, 375 described for the depositiongases, and are exposed to the substrate 302. During the thermal annealoperation, the purge gas is introduced through the purge gas inlet 364,and optionally the gases from the plasma source lid assembly 370 areintroduced while the microwave resonators 374 are inactive (e.g.,unpowered). During the thermal anneal operation, the radiant heatinglamps 304 heat the substrate 302 to the anneal temperature that is 600degrees Celsius or higher while the substrate 302 is exposed to the oneor more anneal gases.

The system 301 also includes the non-transitory computer-readable medium250 (shown in FIG. 2) coupled to the processing chamber 300 to controloperations of the processing chamber 300. The non-transitorycomputer-readable medium 250 includes support circuits 367, a centralprocessing unit (CPU) 368 and a memory 369 that includes theinstructions. The instructions are executed by the CPU 368.

FIG. 4 is a schematic cross-sectional view of a processing chamber 400,according to one implementation. The processing chamber 400 is a part ofa system 401 that is similar to the system 301. The processing chamber400 is similar to the processing chamber 300 shown in FIG. 3, andincludes one or more of the aspects, features, components, and/orproperties thereof. The processing chamber 400 is a thermal chemicalvapor deposition (CVD) chamber equipped with a remote plasma source ofatomic hydrogen.

The remote plasma source 480 is coupled to the ceiling 391 of theinterior volume 311 through a central opening 472 of a lid assembly 471.The remote plasma source 480 is an inductively coupled plasma (“ICP”)source or a microwave plasma source. The remote plasma source 480receives Hydrogen (H2), Helium, and/or Argon from a gas source, andgenerates the hydrogen plasma in the remote plasma source 480. Thehydrogen plasma source having the atomic hydrogen radicals is introducedinto the interior volume 311 through the ceiling 391 to expose thesubstrate 302 to the atomic hydrogen radicals. The one or moredeposition gases can be introduced into the interior volume 311 of theprocessing chamber 400 according to any way described for FIG. 3.

In one embodiment, which can be combined with other embodiments, theremote plasma source 480 includes a diameter (taken along the X-Y plane)that is equal to our larger than a diameter of the substrates 302. TheX-Y plane is parallel to the device side 350 of the substrate 302.

FIG. 5 is a schematic cross-sectional view of a processing chamber 500,according to one implementation. The processing chamber 500 includes ahousing structure 501 made of a process resistant material, such asaluminum or stainless steel, for example 316 L stainless steel. Thehousing structure 501 encloses various functioning elements of thechamber 500, such as a quartz chamber 530, which includes an upperquartz chamber 505, and a lower quartz chamber 524, in which an interiorvolume 518 is contained. The processing chamber 500 includes the processgas source 351 to introduce the one or more deposition gases and/or theone or more anneal gases into the interior volume 518. The process gassource 351 is coupled to a gas injection plenum 514 formed in a sidewallof one or more sidewalls of the processing chamber 500.

The processing chamber 500 includes a remote plasma source 588 that iscoupled to a plasma opening 579 by a conduit 560. The plasma opening 579is formed in a sidewall of the one or more sidewalls of the processingchamber 500. The conduit 560 defines an inlet 556, which may have afirst inner diameter and a second inner diameter that is larger than thefirst inner diameter. The first inner diameter may be disposed adjacentto the remote plasma source 588 and the second inner diameter may bedisposed adjacent to the plasma opening 579. In one example, first innerdiameter may be about 12 mm to about 30 mm, for example about 20 mm, andthe second inner diameter may be about 35 mm to about 60 mm, for exampleabout 40 mm. The conduit 560 is configured to filter ions generated inthe remote plasma source 588 before entering the quartz chamber 530,while allowing electrically neutral atomic hydrogen radicals to enterthe quartz chamber 530. The relative concentration of ions in theinterior volume 518 is reduced. In one implementation, the gases flowingthrough the inlet 556 are filtered by a magnetic field generated by oneor more magnets disposed adjacent to the conduit 560. The magnetsgenerate a magnetic field across the conduit 560 to filter chargedparticles entrained with the reactive radicals flowing from the remoteplasma source 588.

In the implementation shown, a first magnet 552 and a second magnet 554are disposed adjacent to the conduit 560. The first magnet 552 andsecond magnet 554 may be permanent magnets or electromagnets. Themagnets 552, 554 may be disposed opposite from each other across thefirst inner diameter of the conduit 560. For example, the magnets 552,554 may be adhered or secured on opposite sides of an outer periphery ofthe conduit 560. The magnets 552, 554 may alternately be secured to asidewall of the processing chamber 500 or other components of theprocessing chamber 500. The relative distance between the opposed magnetand the inlet 556 formed within the conduit 560 affects the strength ofthe magnetic field passing through the inlet 556, and thereby affectsthe filtering efficiency. The magnetic field may also be adjusted byusing different magnets, e.g., replacing magnets 552, 554 with differentstrength. The passing charged particles are drawn in contact with aninner surface 570 of the conduit 560 and become electrically neutral,non-ionic species. As such, the filtered, electrically neutral radicalsare delivered to the surface of the substrate to react with and etchnodules thereon.

Gases and processing byproducts are removed from the interior volume 518by an outlet 538 in communication with a vacuum source. A substratesupport 517 is adapted to receive a substrate 525 that is transferred tothe interior volume 518. The substrate support 517 is disposed along alongitudinal axis 502 of the chamber 500. The one or more depositiongases, the atomic hydrogen radicals, and the anneal gases arerespectively applied to a surface 516 of the substrate 525, andbyproducts may be subsequently removed from the surface 516. Heating ofthe substrate 525 and/or the interior volume 518 may be provided byradiation sources, such as upper lamp modules 510A and lower lampmodules 510B.

The upper lamp modules 510A and lower lamp modules 510B are infrared(IR) lamps in a lamp housing 509. Non-thermal energy or radiation fromlamp modules 510A and 510B travels through upper quartz window 504(e.g., an upper dome) of upper quartz chamber 505, and through a lowerquartz window 503 (e.g., a lower dome) of lower quartz chamber 524.Cooling gases for upper quartz chamber 505, if needed, enter through aninlet 512 and exit through the outlet port 513. The deposition gases,the anneal gases, and the atomic hydrogen radicals enter respectivelythrough the gas injection plenum 514 and the plasma opening 579, andexit through outlet 538. While the upper quartz window 504 is shown asbeing curved or convex, the upper quartz window 504 may be planar withsufficient thickness to withstand the differential pressure across bothsides of the upper quartz window. The substrate support 517 is supportedon a stem 580 that extends through a central opening of the lower quartzwindow 503.

During epitaxial deposition, the low wavelength radiation in theinterior volume 518, which is used to energize reactive species andassist in adsorption of reactants and desorption of process byproductsfrom the surface 516 of substrate 525, typically ranges from about 0.8μm to about 1.2 μm, for example, between about 0.95 μm to about 1.05 μm,with combinations of various wavelengths being provided, depending, forexample, on the composition of the film which is being epitaxiallygrown.

The deposition gases and the anneal gases, shown by flow path 522, enterthrough the gas injection plenum 514 and exit through outlet 538. Theatomic hydrogen radicals, shown by numeral 523, enter through the plasmaopening 579 and exit through the outlet 538, which is a port.Combinations of component gases, which are used to form the siliconand/or germanium-containing film that is being epitaxially grown, or toetch the nodules, are typically mixed prior to entry into the processingvolume. The overall pressure in the interior volume 518 may be adjustedby a valve on the outlet 538. At least a portion of the interior surfaceof the interior volume 518 is covered by a liner 531. In one embodiment,which can be combined with other embodiments, the liner 531 includes aquartz material that is opaque. In this manner, the chamber wall isinsulated from the heat in the interior volume 518.

The temperature of surfaces in the interior volume 518 may be controlledwithin a temperature range of about 200 degrees Celsius to about 600degrees Celsius, or greater, by the combination of water cooling to thehousing structure 501, flow of a cooling gas for the upper and lowerquartz windows, and the radiation from upper and lower lamp modules 510Aand 510B positioned respectively above upper quartz window 504 and lowerquartz window 503. The pressure in the interior volume 518 may bebetween about 0.1 Torr to about 600 Torr, such as between about 5 Torrto about 30 Torr.

The temperature on the substrate 525 surface 516 may be controlled bypower adjustment to the lower lamp modules 510B in lower quartz chamber524, or by power adjustment to both the upper lamp modules 510Aoverlying the upper quartz window 504, and the lower lamp modules 510Bin lower quartz chamber 524. The power density in the interior volume518 may be between about 40 W/cm2 to about 400 W/cm2, such as about 80W/cm2 to about 120 W/cm2.

FIG. 6 is a schematic cross-sectional view of a processing chamber 600,according to one implementation. The processing chamber 600 is similarto the processing chamber 500 shown in FIG. 5, and includes one or moreof the aspects, features, components, and/or properties thereof.

The deposition gases and the anneal gases are provided to the quartzchamber 530 by a gas distribution assembly 550, and processingbyproducts are removed from the interior volume 518 by the outlet 538 incommunication with a vacuum source. The deposition gases, carrier gasesand purge gases are applied to the surface 516 of the substrate 525, andbyproducts may be subsequently removed from the surface 516. Gas flowsfrom the gas distribution assembly 550 and exits through port 538 asshown generally at 522.

In one aspect, the gas distribution assembly 550 is disposed normal to,or in a radial direction 506 relative to, the longitudinal axis 502 ofthe chamber 600 or substrate 525. In this orientation, the gasdistribution assembly 550 is adapted to flow process gases in a radialdirection 506 across, or parallel to, the surface 516 of the substrate525. In one processing application, the process gases are preheated atthe point of introduction to the chamber 600 to initiate preheating ofthe gases prior to introduction to the interior volume 518, and/or tobreak specific bonds in the gases. In this manner, surface reactionkinetics may be modified independently from the thermal temperature ofthe substrate 525.

The processing chamber 600 includes the remote plasma source 588 coupledto the interior volume 518 through a central opening of the upper quartzwindow 504. The conduit 560 of the remote plasma source 588 is receivedthrough the central opening of the upper quartz window 504 and opens upinto the interior volume 518.

In operation, precursors to form epitaxial films are provided to the gasdistribution assembly 550 from the one or more gas sources 540A and540B. IR lamps 586 (only one is shown in FIG. 6) may be utilized to heatthe precursors within the gas distribution assembly 550 as well as alongthe flow path 522. The gas sources 540A, 540B may be coupled the gasdistribution assembly 550 in a manner configured to facilitateintroduction zones within the gas distribution assembly 550, such as aradial outer zone and a radial inner zone between the outer zones whenviewed in from a top plan view. The gas sources 540A, 540B may includevalves to control the rate of introduction into the zones.

The gas sources 540A, 540B may include silicon-containing precursorssuch as one or more silanes, such as silane (SiH₄), disilane (Si₂H₆),dichlorosilane (SiH₂Cl₂), hexachlorodisilane (Si₂Cl₆), dibromosilane(SiH₂Br₂), and/or higher order silanes, derivatives thereof, and/orcombinations thereof. The gas sources 540A, 540B may include one or moregermanium-containing precursors, such as germane (GeH₄), digermane(Ge₂H₆), germanium tetrachloride (GeCl₄), dichlorogermane (GeH₂Cl₂),and/or derivatives thereof, and/or combinations thereof. The siliconand/or germanium containing precursors may be used in combination withhydrogen chloride (HCl), chlorine gas (Cl₂), and/or hydrogen bromide(HBr), and/or combinations thereof. The gas sources 540A, 540B mayinclude one or more of the silicon and germanium containing precursorsin one or both of the gas sources 540A, 540B. The gas sources 540A, 540Bmay include one or more carrier gases such as H₂, N₂, Ar, and/or He. Thegas sources 540A, 540B may include one or more dopant gases. In oneembodiment, which can be combined with other embodiments, the one ormore dopant gases include one or more of diborane (B₂H₆), borontrichloride (BCl₃), phosphine, phosphorous trichloride (PCl₃),tertiarybutylphosphine (TBP), silylphosphines, arsine (AsH₃),tertiarybutylarsine (TBA), triethylantimony (TESb), tin chloride(SnCl₄), and trimethylgallium (TMGa).

The precursor materials enter the interior volume 518 through openingsor a plurality of holes 558 (only one is shown in FIG. 6) in theperforated plate 587 in this excited state, which in one embodiment is aquartz material, having the holes 558 formed therethrough. Theperforated plate 587 is transparent to IR energy, and may be made of aclear quartz material. In other embodiments, the perforated plate 587may be any material that is transparent to IR energy and is resistant toprocess chemistry and other process chemistries. The energized precursormaterials flow toward the interior volume 518 through the plurality ofholes 558 in the perforated plate 587, and through a plurality ofchannels 589 (only one is shown in FIG. 6). A portion of the photons andnon-thermal energy from the IR lamps 586 also passes through the holes558, the perforated plate 587, and channels 589 facilitated by areflective material and/or surface disposed on the interior surfaces ofthe gas distribution assembly 550, thereby illuminating the flow path522 of the precursor materials. In this manner, the vibrational energyof the precursor materials may be maintained from the point ofintroduction to the interior volume 518 along the flow path 522.

Benefits of the present disclosure include removing residual ornon-selective growth (e.g., nodules) in undesired locations at a reducedor eliminated probability of damage to or interference with epitaxiallayers in desired locations.

It is contemplated that one or more aspects disclosed herein may becombined. As an example, one or more aspects, features, components,and/or properties of the method 100, the system 200, the system 301, thesystem 401, the processing chamber 500, and/or the processing chamber600 may be combined. Moreover, it is contemplated that one or moreaspects disclosed herein may include some or all of the aforementionedbenefits.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof. The presentdisclosure also contemplates that one or more aspects of the embodimentsdescribed herein may be substituted in for one or more of the otheraspects described. The scope of the disclosure is determined by theclaims that follow.

What is claimed is:
 1. A method of processing substrates, comprising:selectively growing an epitaxial layer on one or more crystallinesurfaces of a substrate, the epitaxial layer comprising silicon; etchingthe substrate to remove a plurality of nodules from one or morenon-crystalline surfaces of the substrate, the etching comprisingexposing the substrate to atomic hydrogen radicals; and thermallyannealing the epitaxial layer to an anneal temperature that is 600degrees Celsius or higher.
 2. The method of claim 1, wherein theepitaxial layer is selectively grown at a growth temperature within arange of 200 degrees Celsius to 800 degrees Celsius.
 3. The method ofclaim 1, wherein the substrate is exposed to the atomic hydrogenradicals at an etch pressure within a range 5 mTorr to 500 mTorr.
 4. Themethod of claim 3, wherein the substrate is exposed to the atomichydrogen radicals at a flow rate within a range of 100 SCCM to 300 SCCM.5. The method of claim 4, wherein the thermally annealing the epitaxiallayer to the anneal temperature comprises exposing the epitaxial layerto one or more of H₂, N₂, He or Argon while heating the epitaxial layer.6. The method of claim 1, further comprising repeating the selectivelygrowing the epitaxial layer, the etching the substrate, and thethermally annealing the epitaxial layer one or more additional times onthe substrate.
 7. The method of claim 1, wherein the exposing thesubstrate to the atomic hydrogen radicals comprises exposing the one ormore non-crystalline surfaces of the substrate to the atomic hydrogenradicals to remove the plurality of nodules from the one or morenon-crystalline surfaces, and the one or more non-crystalline surfacesinclude one or more dielectric surfaces.
 8. A system for processingsubstrates, comprising: one or more processing chambers; a controller,the controller comprising instructions that, when executed, cause theone or more processing chambers to: selectively grow an epitaxial layeron one or more crystalline surfaces of a substrate, the epitaxial layercomprising silicon; etch the substrate to remove a plurality of nodulesfrom one or more dielectric surfaces of the substrate, the etchingcomprising exposing the substrate to atomic hydrogen radicals; andthermally anneal the epitaxial layer to an anneal temperature that is600 degrees Celsius or higher.
 9. The system of claim 8, wherein: theselectively growing the epitaxial layer on the one or more crystallinesurfaces of the substrate is conducted in an epitaxy chamber of the oneor more processing chambers; the etching the substrate to remove theplurality of nodules from the substrate is conducted in an etch chamberof the one or more processing chambers; and the thermally annealing theepitaxial layer to the anneal temperature is conducted in an annealchamber of the one or more processing chambers.
 10. The system of claim9, wherein the etch chamber is a plasma hydrogen chamber.
 11. The systemof claim 10, wherein the exposing the substrate to the atomic hydrogenradicals comprises introducing the atomic hydrogen radicals into theplasma hydrogen chamber from a remote plasma source coupled to theplasma hydrogen chamber.
 12. The system of claim 9, wherein theinstructions, when executed, further cause transferring of the substrateunder vacuum from the epitaxy chamber and to the etch chamber, andtransferring of the substrate under vacuum from the etch chamber and tothe anneal chamber.
 13. The system of claim 9, wherein the instructions,when executed, further cause the one or more processing chambers topre-clean the substrate to remove one or more contaminants from the oneor more crystalline surfaces prior to the selectively growing theepitaxial layer.
 14. The system of claim 8, wherein each of theselectively growing the epitaxial layer on the one or more crystallinesurfaces of the substrate, the etching the substrate to remove theplurality of nodules from the substrate, and the thermally annealing theepitaxial layer to the anneal temperature is conducted in a singleprocessing chamber of the one or more processing chambers.
 15. A systemfor processing substrates, comprising: a processing chamber comprisingan interior volume; a plasma source coupled to the processing chamber; acontroller, the controller comprising instructions that, when executed,cause the processing chamber to: selectively grow an epitaxial layer onone or more crystalline surfaces of a substrate, the epitaxial layercomprising silicon; etch the substrate to remove a plurality of nodulesfrom one or more dielectric surfaces of the substrate, the etchingcomprising: generating atomic hydrogen radicals using the plasma source,and exposing the substrate to the atomic hydrogen radicals within theinterior volume; and thermally anneal the epitaxial layer.
 16. Thesystem of claim 15, wherein the processing chamber comprises: a chamberbody surrounding the interior volume, the chamber body comprising one ormore quartz walls; a substrate support disposed in the interior volume,wherein the substrate support is rotatable; and a gas injection plenumcoupled to the interior volume to deliver one or more deposition gasesto the interior volume, the one or more deposition gases comprising oneor more of silicon, phosphorous, boron, germanium, or chlorine.
 17. Thesystem of claim 16, wherein the plasma source is coupled to a quartzwall of the one or more quartz walls to couple the plasma source to aside of the interior volume.
 18. The system of claim 16, wherein the gasinjection plenum is coupled to a quartz wall of the one or more quartzwalls to deliver the one or more deposition gases through a side of theinterior volume.
 19. The system of claim 16, wherein the gas injectionplenum is aligned vertically below the plasma source.
 20. The system ofclaim 16, wherein the plasma source is coupled to a lid assembly of theprocessing chamber to deliver the atomic hydrogen radicals through aceiling of the interior volume.